The National Institute of Research and Development for Optoelectronics - INOE 2000 was established in 1996 by Government Decision - HG 1196/1996. The Institute develops fundamental and applied research in the field of optoelectronics, based on the interaction processes of the optical field with matter, in conjunction with the development of complementary methods in the field of analytical chemistry and high pressure physics, being aligned with the priority scientific directions of the European Research Area.

Since 2012, following the evaluation for certification based on GD no.1062/2011 by an international commission of specialists in the field, appointed on the basis of Decision no. 9106 of 20 April 2012, it has obtained the maximum grade (A+), confirmed by Decision 9008/07.01.2016, by ANCSI's advisory body, the Advisory Board for Research, Development and Innovation.

According to Ministry of Education and Research Order no. 3190/27.01.2021, the National Institute of Research and Development for Optoelectronics INOE 2000 is reaccredited for the next 5 years, following the evaluation according to GD 477/2019. The evaluation was carried out by a team of independent specialists, appointed by OMEC 6135/9.12.2021.